Gallium Nitride GaN
Product Detail
| No. |
Items |
Standard Specification |
| 1 |
Shape |
Circular |
Circular |
Square |
| 2 |
Size |
2" |
4" |
-- |
| 3 |
Diameter mm |
50.8±0.5 |
100±0.5 |
-- |
| 4 |
Side Length mm |
-- |
-- |
10x10 or 10x5 |
| 5 |
Growth Method |
HVPE |
HVPE |
HVPE |
| 6 |
Orientation |
C-plane (0001) |
C-plane (0001) |
C-plane (0001) |
| 7 |
Conductivity Type |
N/(Si-doped or un-doped), Semi-insulating |
| 8 |
Resistivity Ω-cm |
<0.1, <0.05, >1E6 |
| 9 |
Thickness μm |
350±25 |
350±25 |
350±25 |
| 10 |
TTV μm max |
15 |
15 |
15 |
| 11 |
Bow μm max |
20 |
20 |
20 |
| 12 |
EPD cm-2 |
<5E8 |
<5E8 |
<5E8 |
| 13 |
Surface Finish |
P/E, P/P |
P/E, P/P |
P/E, P/P |
| 14 |
Surface Roughness |
Front: ≤0.2nm, Back: 0.5-1.5μm or ≤0.2nm |
| 15 |
Packing |
Single wafer container sealed in Aluminum bag. |
| Linear Formula |
GaN |
| Molecular Weight |
83.73 |
| Crystal structure |
Zinc blende or Wurtzite |
| Apperance |
Translucent solid |
| Melting Point |
2500 °C |
| Boiling Point |
N/A |
| Density at 300K |
6.15 g/cm3 |
| Energy Gap |
(3.2-3.29) eV at 300K |
| Intrinsic resistivity |
>1E8 Ω-cm |
| CAS Number |
25617-97-4 |
| EC Number |
247-129-0 |
- Sample Available Upon Request
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