| No. |
Items |
Standard Specification |
| 1 |
Size |
2" |
3" |
4" |
| 2 |
Diameter mm |
50.5±0.5 |
76.2±0.5 |
100±0.5 |
| 3 |
Growth Method |
LEC |
LEC |
LEC |
| 4 |
Conductivity |
P/(Zn-doped or un-doped), N/Te-doped |
| 5 |
Orientation |
(100)±0.5°, (111)±0.5° |
| 6 |
Thickness μm |
500±25 |
600±25 |
800±25 |
| 7 |
Orientation Flat mm |
16±2 |
22±1 |
32.5±1 |
| 8 |
Identification Flat mm |
8±1 |
11±1 |
18±1 |
| 9 |
Mobility cm2/V.s |
200-3500 or as required |
| 10 |
Carrier Concentration cm-3 |
(1-100)E17 or as required |
| 11 |
TTV μm max |
15 |
15 |
15 |
| 12 |
Bow μm max |
15 |
15 |
15 |
| 13 |
Warp μm max |
20 |
20 |
20 |
| 14 |
Dislocation Density cm-2 max |
500 |
1000 |
2000 |
| 15 |
Surface Finish |
P/E, P/P |
P/E, P/P |
P/E, P/P |
| 16 |
Packing |
Single wafer container sealed in Aluminum bag. |