| No. |
Items |
Standard Specification |
| 1 |
Size |
2" |
3" |
4" |
6" |
| 2 |
Diameter mm |
50.8 0.38 |
76.2 0.38 |
100 0.5 |
150 0.5 |
| 3 |
Growth Method |
MOCVD |
MOCVD |
MOCVD |
MOCVD |
| 4 |
Conductivity Type |
4H-N, 6H-N, 4H-SI, 6H-SI |
| 5 |
Resistivity Ω-cm |
0.015-0.028; 0.02-0.1; >1E5 |
| 6 |
Orientation |
0°±0.5°; 4.0° towards <1120> |
| 7 |
Thickness μm |
330±25 |
330±25 |
(350-500)±25 |
(350-500)±25 |
| 8 |
Primary Flat Location |
<1-100>±5° |
<1-100>±5° |
<1-100>±5° |
<1-100>±5° |
| 9 |
Primary Flat Length mm |
16±1.7 |
22.2±3.2 |
32.5±2 |
47.5±2.5 |
| 10 |
Secondary Flat Location |
Silicon face up: 90°, clockwise from prime flat ±5.0° |
| 11 |
Secondary Flat Length mm |
8±1.7 |
11.2±1.5 |
18±2 |
22±2.5 |
| 12 |
TTV μm max |
15 |
15 |
15 |
15 |
| 13 |
Bow μm max |
40 |
40 |
40 |
40 |
| 14 |
Warp μm max |
60 |
60 |
60 |
60 |
| 15 |
Edge Exclusion mm max |
1 |
2 |
3 |
3 |
| 16 |
Micropipe Density cm-2 |
<5, industrial; <15, lab; <50, dummy |
| 17 |
Dislocation cm-2 |
<3000, industrial; <20000, lab; <500000, dummy |
| 18 |
Surface Roughness nm max |
1(Polished), 0.5 (CMP) |
| 19 |
Cracks |
None, for industrial grade |
| 20 |
Hexagonal Plates |
None, for industrial grade |
| 21 |
Scratches |
≤3mm, total length less than substrate diameter |
| 22 |
Edge Chips |
None, for industrial grade |
| 23 |
Packing |
Single wafer container sealed in Aluminum bag. |