Zinc Telluride ZnTe || Tellurides

No.	Item	Standard Specification
		Formula	Purity	Impurity PPM Max each
1	Zinc Telluride	ZnTe	5N	Mg/Cu/Ni/In/As/Al 0.5,  Cd/Pb/Sn 1.0, Ag 0.2, Co 0.1
2	Arsenic Telluride	As2Te3	4N 5N	Available Upon Request.Special specification can be customized
3	Antimony Telluride	Sb2Te3	4N 5N
4	Aluminum Telluride	Al2Te3	4N 5N
5	Bismuth Telluride	Bi2Te3	4N 5N
6	Copper Telluride	Cu2Te	4N 5N
7	Cadmium Telluride	CdTe	5N 6N 7N
8	Cadmium Zinc Telluride	CdZnTe	5N 6N 7N
9	Cadmium Manganese Telluride	CdMnTe	5N 6N
10	Gallium Telluride	Ga2Te3	4N 5N
11	Indium Telluride	InTe	4N 5N
12	Lead Telluride	PbTe	5N
13	Molybdenum Telluride	MoTe2	3N5
14	Tungsten Telluride	WTe2	3N5
15	Size	-60/-80mesh, 1-20mm Lump, 1-6mm Granule, Target or Blank
16	Packing	In polyethylene bottle or composite bag, 1kg each.

Bismuth Telluride (P/ N-type Bi2Te3), Purity 4N 99.99%, N Type with Selenium doped or P type with Antimony doped, by vacuum smelting- controlled crystallization process namely with the Bridgman-Stockbarber method and Zone-floating method. As thermoelectric semiconductor material, the bismuth telluride pseudo binary alloy presents the best characteristics for room temperature thermoelectric cooling applications for miniaturized versatile cooling devices in a wide spectrum of equipments and energy generation in space vehicles. By using appropriately oriented single crystals instead of polycrystalline, the efficiency of the thermoelectric device (Thermoelectric Cooler or Thermoelectric Generator) could be increased greatly, which can be founded in semiconductor refrigeration and temperature difference power generation filed.

Indium Telluride InTe, 99.999% Molecular weight 242.4, density of 6.29 g/cm3 Melting point is 696 ℃ black or blue-gray crystal tetragonal crystal structure insoluble in hydrochloric acid, soluble in nitric acid by CVD chemical vapor deposition process, used in semiconductor industry, sensor parts, lens coating

Arsenic Telluride or Arsenic Ditelluride As₂Te₃, a group I-III binary compound, is in two crystallographic Alpha-As₂Te₃ and Beta-As₂Te₃, Among which Beta-As₂Te₃ with rhombohedral structure, exhibits interesting thermoelectric (TE) properties by adjusting the content of alloys. Polycrystalline Arsenic Telluride As₂Te₃ compound synthesized by powder metallurgy may be an interesting platform to design novel TE materials with high efficiency. Single crystals of As2Te3 is prepared hydrothermally by heating and gradually cooling a mixture of stoichiometric quantities of powdered As and Te in a HCl 25% w/w solution. It is mainly used as semiconductors, topological insulators, thermoelectric materials.

Gallium Telluride Ga₂Te₃, molecular weight 522.24, CAS 12024-27-0 is a hard and brittle black crystal with a melting point of 790℃ at 266.64pa, density 5.57g/cm³. Single crystal Gallium Telluride GaTe is developed by using different growth techniques such as Bridgman Growth, Chemical Vapor Transport (CVT), or Flux Zone Growth to optimize grain size, defect concentration, structural, optical, and electronic consistency. But Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals, which distinguishes itself from Chemical Vapor Transport CVT technique to ensure slow crystallization for perfect atomic structuring, and impurity free crystal growth. Gallium telluride GaTe, is a layered semiconductor belonging to the III-VI metal. This layered crystal with two modifications, which are stable α-GaTe of a monoclinic and metastable β-GaTe of hexagonal in structure, good p-type transport properties, a direct band-gap of 1.67 eV in the bulk. The hexagonal phase converts to the monoclinic phase at high temperature. Layered semiconductors possesses a unique monoclinic structure, Gallium telluride, GaTe possesses interesting properties attractive for future opto-electronic applications.

Molybdenum Telluride or Molybdenum Ditelluride MoTe₂, CAS No 12058-20-7, Formula Weight 351.14, is a gray hexagonal crystal solid compound. Molybdenite MoTe₂ and Tetramolybdenite Mo₃Te₄ are stable in air and decompose in alkali, insoluble in water, soluble in nitric acid, decomposes but  not melting at high temperature in vacuum.  Molybdenum Telluride is synthesized in sealed vacuum tube at higher temperature by reacting of molybdenum and tellurium to form homogeneous compounds MoTe₂ and Mo₃Te₄.  Molybdenum Telluride is a crystal produced for solid lubricant or as a sputtering targets in semiconductor field.

Tungsten Telluride or Tungsten Ditelluride WTe₂, metal appearance, typical acicular and rectangular shape, CAS No.12067-76-4, stable in ambient conditions, is a type-II Weyl semimetal WSM, belongs to group VI transition metal dichalcoride TMDC with physical, electronic and thermodynamic properties that make it attractive for a variety of electronic device architectures such as field effect transistors applications.  With a typical carrier concentration of about 1E20-1E21 cm^-3 at room temperature and as a new type of unsaturated linear magnetoresistive material, Tungsten Ditelluride series material obtained by hydrothermal/solvothermal method and self-fluxing method has potential applications in the fields of strong magnetic detection, information recording and magnetic storage devices.Single Crystal Tungsten Telluride is grown by highly sophisticated float zone technique to drive out defects intentionally during the growth process to achieve defect free and environmentally stable WTe2 crystals.

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